1. product profile 1.1 general description 1000 w ldmos pulsed power transistor inten ded for tcas and iff applications in the 1030 mhz to 1090 mhz frequency range. 1.2 features and benefits ? easy power control ? integrated esd protection ? high flexibility with resp ect to pulse formats ? excellent ruggedness ? high efficiency ? excellent thermal stability ? designed for broadband operation (960 mhz to 1215 mhz) ? internally matched for ease of use ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? 1000 w ldmos pulsed power transistor inte nded for tcas and iff applications in the 1030 mhz to 1090 mhz frequency range BLA6H0912L-1000; bla6h0912ls-1000 ldmos avionics power transistor rev. 2 ? 10 february 2014 objective data sheet table 1. application information typical rf performance at t case =25 ? c; t p = 50 ? s; ? = 2 %; i dq = 200 ma; in a class-ab application circuit. test signal f v ds p l g p ? d t r t f (mhz) (v) (w) (db) (%) (ns) (ns) pulsed rf 1030 50 1000 16 52 11 5
BLA6H0912L-1000_0912ls-1000 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all right s reserved. objective data sheet rev. 2 ? 10 february 2014 2 of 13 nxp semiconductors bla6h0912l(s)-1000 ldmos avionics power transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect the reliability, for details refer to the on-line mtf calculator. table 2. pinning pin description simplified outline graphic symbol BLA6H0912L-1000 (sot539a) 1drain1 2drain2 3gate1 4gate2 5source [1] bla6h0912ls-1000 (sot539b) 1drain1 2drain2 3gate1 4gate2 5source [1] v \ p v \ p table 3. ordering information type number package name description version BLA6H0912L-1000 - flanged balanced ceramic package; 2 mounting holes; 4 leads sot539a bla6h0912ls-1000 - earless flanged balanced ceramic package; 4 leads sot539b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 100 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ?c t j junction temperature [1] - 225 ?c
BLA6H0912L-1000_0912ls-1000 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all right s reserved. objective data sheet rev. 2 ? 10 february 2014 3 of 13 nxp semiconductors bla6h0912l(s)-1000 ldmos avionics power transistor 5. thermal characteristics 6. characteristics 7. test information 7.1 ruggedness in class-ab operation the BLA6H0912L-1000 and the bla6h0912ls-1000 are capable of withstanding a load mismatch corresponding to vswr = 5 : 1 through all phases under the following conditions: v ds =50v; i dq =200ma; p l =1000w; t p = 50 ? s; ? = 2 %; f = 1030 mhz. table 5. thermal characteristics symbol parameter conditions typ unit z th(j-c) transient thermal impedance from junction to case t case =80 ? c; p l = 1000 w t p = 50 ? s; ? =2% 0.011 k/w t p = 100 ? s; ? = 10 % 0.021 k/w t p = 200 ? s; ? = 10 % 0.025 k/w t p = 300 ? s; ? = 10 % 0.027 k/w t p = 2.4 ms; ? = 6.4 % 0.041 k/w table 6. dc characteristics t j = 25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d = 4 ma 104.5 - - v v gs(th) gate-source threshold voltage v ds = 10 v; i d = 270 ma 1.4 1.8 2.4 v i dss drain leakage current v gs =0v; v ds =50v--3 ? a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10v 53 - - a i gss gate leakage current v gs =11v; v ds =0v--300na g fs forward transconductance v ds =10v; i d = 400 ma 2.3 - - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =14a --120m ? table 7. rf characteristics test signal: pulsed rf; t p = 50 ? s; ? = 2 %; rf performance at v ds =50v; i dq =200ma; f = 1030 mhz; t case =25 ? c; unless otherwise specified, in a class-ab production test circuit. symbol parameter conditions min typ max unit v ds drain-source voltage p l =1000w - - 50 v g p power gain p l = 1000 w 15.5 - db rl in input return loss p l =1000w - ? 20 db ? d drain efficiency p l =1000w 50 - % p droop(pulse) pulse droop power p l =1000w - 0 0.3 db t r rise time p l =1000w - 11 30 ns t f fall time p l = 1000 w - 5 30 ns
BLA6H0912L-1000_0912ls-1000 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all right s reserved. objective data sheet rev. 2 ? 10 february 2014 4 of 13 nxp semiconductors bla6h0912l(s)-1000 ldmos avionics power transistor 7.2 impedance information 7.3 circuit information table 8. typical impedance typical values per section unless otherwise specified. f z s z l ( ? d ) z l (g p ) (mhz) (? ) (? ) (? ) 950 1.12 ? j2.27 0.60 + j0.21 0.62 ? j0.02 1000 1.39 ? j2.69 0.54 + j0.08 0.66 ? j0.06 1050 1.79 ? j2.79 0.40 + j0.03 0.52 ? j0.28 1100 2.44 ? j2.72 0.41 ? j0.12 0.67 ? j0.29 1150 1.68 ? j2.52 0.49 ? j0.21 0.53 ? j0.35 1200 4.68 ? j2.97 0.36 ? j0.30 0.57 ? j0.40 fig 1. definition of transistor impedance d d i g u d l q = / = 6 j d w h printed-circuit board (pcb) material: rogers duroid 6002 with ? r = 2.94 and thickness = 0.762 mm. see table 9 for list of components. fig 2. component layout 5 5 & |